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  • A size of silicon wafer approximately 8 inches in diameter.也用于指tooldesigned to process wafers of this size.
  • 直径约12英寸的硅片。也用于指tooldesigned to process wafers of this size.
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  • A process where toxic or other hazardous substances are removed from a liquid or gas.Examples include removing copper particles from化学机械抛光slurry or converting liquid or gaseous toxic effluents into safe forms for disposal.
  • An impurity in a semiconductor that accepts electrons.Boron is the primary acceptor used to dope silicon in the离子注入process.
  • 一种用于在生产线中临时存储在制品的存储单元。
  • In离子注入,把原子引入晶体管的一部分以改变其材料特性的过程;在最常见的应用中,,dopant原子开始带电,即收费carrier从而提高了植入区域的导电性。
  • 当注入掺杂物原子时,the silicon crystal晶格is disrupted,或amorphized.随后使用实时传输协议,在此过程中,掺杂离子占据晶格和电荷中的取代位。carrieris created.
  • 一种使用电致发光阵列的显示器。有机发光二极管像素由thin-film transistors.
  • AMOLED显示器的每个像素直接产生光,不像TFT-LCD整个显示器由背光照亮,并由控制每个像素液晶偏振的薄膜晶体管选择性地允许通过。
  • The key benefit of AMOLED displays compared to TFT-LCDs is that because"off"像素不消耗能量,整体功耗明显降低。
  • A type ofbinary photomaskthat uses an opaque MoSi layer as the light-absorbing layer.在顶部放置一个非常薄的Cr层,用作hard maskfor the etch process.Also called an opaque MoSi on glass (OMOG) photomask.
  • A thin film沉积一次沉积一部分单层材料的技术。
  • PVDprocess performed at low pressure and largetarget-晶圆距离,以产生沉积物种的定向通量。
  • A type ofPSM将石英基板的区域蚀刻到不同深度,以便在透射光中引入180度的相移,以提高对比度,从而提高晶片上投影图像的分辨率。
  • 微芯片内的铝通路,用于连接晶体管和其他电路元件。
  • In离子注入,a magnet used to analyze ion species and select the desired ions based on atomic weight.
  • 长度单位;十亿分之一米。
  • 一种高温处理步骤,用于修复晶圆晶体结构中的缺陷或诱导相变。
  • In离子注入,an opening through which an ion beam is directed that defines the shape and size of the beam going forward.
  • 吸光层(通常是氮化钛);沉积在金属或多晶硅上,to improve光刻performance.
  • The ratio of depth to width of a circuit feature such as a通过接触.
  • A type ofPSMthat allows a small amount of light to be transmitted through certain regions to interfere with the light coming from transparent parts of the mask,以提高晶片对比度为目标。
  • 光伏组件制造,高压灭菌器用于通过使模块承受高温和高压来去除滞留的空气并提高层压膜与玻璃基板之间的粘合性。
  • 任何设备都有一个移动磁带的载体传送机器人,pods,或片盒进出固定设备。
  • A technique employed by晶片检验系统whereby defects are placed into several categories based on their physical and optical properties.
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  • A metallic layer that covers the entire back surface of a solar光伏发电作为导体。
  • 也用于指先进的电池设计,如超声心动图where both terminals of the cell are located on the back side of the wafer,从而增加电池的集光面积,从而提高转换效率。
  • 薄膜太阳能组件的底层,提供刚性和电绝缘。Current is extracted from the module through thejunction boxthat is attached to the circuit through a hole in the back glass.
  • 在真空抽气过程中通过加热加速真空系统或部件表面脱气的技术。Used to reduce the time taken to reach UHV pressures.
  • 除太阳能组件外,还应提供使太阳能光伏发电系统正常运行所需的组件,包括安装结构,cabling,逆变器,土地和维护。
  • 一种物理层,用于防止阻挡层上方和下方的层混合。
  • 同时处理多个晶圆的工艺序列,与单晶圆(系列)加工相反。
  • In离子注入,离子束中任何不需要的物质或离子电荷。
  • 离子注入机终端站的扫描电流,定义为数字的乘积,velocity and charge of the species in the beam.
  • 晶体管制造到晶圆完成后的一系列工艺步骤,电气试验前。Also known as the back-end of semiconductor manufacturing.术语“后端”也用于指晶圆完成后的芯片制造部分。即dicing,packaging and test.
  • 在存储设备的基片的给定区域内,对压缩存储单元的测量。
  • 一般来说,higher bit density is desirable because it tends to increase performance and decrease cost-per-bit.
  • 通常以每平方英寸的位来测量。
  • Lines through which information is written/read to/from memory cells.
  • Shoe covers worn to reduce contamination in a洁净室.
  • 参数用于沉积to describe the ability of a process to deposit material in the bottom of circuit features compared to the top surface of the wafer,或领域.It is defined as the ratio of the film thickness on the field divided by the film thickness at the bottom of a given feature.
  • 掺杂SiO制成的非晶态绝缘材料with boron and phosphorus to improve moisture resistance and reflow characteristics.
  • defect inspection收集缺陷反射光的技术,创建一个缺陷在白色背景下看起来很暗的图像。一般来说,Brightfield系统更敏感,but slower thandarkfield检查。Brightfield inspection is typically used to find patterning defects during transistor fabrication.
  • 一种全身穿着的衣服。洁净室减少颗粒和污染物向空气中的释放。
  • 在薄膜光伏组件中,从单个太阳能电池收集能量的相对较大的导电带。
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C

  • The degree to which a material can store an electrical charge.
  • 临时储存电荷的电子元件。它由两个导电面组成,由一个非导电面隔开电介质.
  • 电子或通过导电或半导体材料带电荷的。
  • 一个度量,通常以厘米为单位/v·s,of how rapidly a charge carrier (an electron or) can move through a semiconductor in response to an applied electric field.材料的导电性与迁移率乘以载流子浓度成正比。High mobility is highly desirable in semiconductor devices because it leads to higher device performance through faster transistor switching.
  • A metal or plastic open container used for transporting wafers (usually 25) to and from a tool.磁带可以保护晶片不受直接处理可能造成的损坏。
  • 一种使用碲镉化合物作为光转换活性层的薄膜太阳能电池。
  • 用于蚀刻的参数,用于描述etchprocess.CDU是指重复特征尺寸与其名义值之间的变化。(CD)在多个点测量基底.

Computational Fluid Dynamics,流体力学的一个分支,使用数值方法和算法来解决和分析涉及流体流动的问题,,

  • 在一个FET,通道是电子在来源and排水终端,as controlled by a voltage applied to the大门.
  • In离子注入,channeling occurs when some ions in a beam strike the wafer between atomic lattice structures of single-crystal silicon and penetrate deeper than the other ions.由于无法精确计算或控制植入物的深度,因此不希望出现沟道。倾斜或旋转晶圆可以减少沟道,用氧化屏覆盖其表面,或者对硅进行预非晶化。
  • The loss of an electron by an atomic particle to an ionized atom.
  • 铜铟二硒化物:一种使用铜化合物的薄膜太阳能电池材料,铟,selenium.第四个元素,镓,也可以添加到化合物(CIGS)中以获得更高的效率.
  • 工厂中的一个区域,在那里空气被调节以除去空气中的颗粒物,这些颗粒物可能妨碍半导体器件的正常工作。
  • 金属氧化物半导体device consisting of paired p-通道以及N通道晶体管。
  • 也用于指用于构建具有CMOS晶体管的集成电路的制造工艺系列。
  • A process that uses an abrasive,化学活性泥浆,物理研磨部分加工过的晶圆上的微观形貌特征,以便随后的加工可以从平面开始。Also referred to as chemical mechanical polishing.
  • 离子注入technique that implants two species into the same region of the material in order to improve the electrical properties of the doped region,通常是为了提高晶体管的性能。
  • 例如,非掺杂原子,如氟或氮可与dopantssuch as boron to produce ultra-shallowPMOS晶体管频道使用改良的掺杂剂激活and a very sharp transition from the doped to the undoped regions.
  • 包装的底面与印刷电路板的着地面平行。
  • 液晶平板显示器的一层,分为红色透明区域,绿色和蓝色,each of which overlays a transistor which is switched on an off to the full range of colors.
  • 利用计算机系统和软件协助创造,modification,或分析二维或三维设计。
  • 利用计算机控制整个生产过程的制造方法,允许各个步骤交换信息并启动操作。
  • 一种含有移动电荷载体的材料,例如电子或离子。
  • 芯片上的一种特性,它在第一个互连layer and the transistor.This area is often filled with tungsten.
  • 射频等离子体generation,指保持恒定频率和振幅的波形,与“相反”脉冲的”delivery where the supply is modulated,通常在两个不同的振幅之间,频率在100-1000Hz范围内。
  • 互连以铜为导电材料的结构,与铝互连相比,提供更高的设备速度和更低的功耗。
  • 一层薄薄的铜层,通常由物理气相沉积,which acts as a wetting and nucleation layer for successful subsequent copper bulk film deposition by电化学电镀.
  • dopingprocess that deposits a conformal layer of material containing the desireddopantspecies and then uses a thermal process to drive the dopants to a controlled depth in the underlying circuit structures.CPD provides a means to dope complex,三维结构。兴奋剂通常由离子注入,它用高速运动的掺杂离子轰击晶圆。However,这种视线轰击过程不能提供均匀的3D结构掺杂。More importantly,快速移动的离子会损坏尖端芯片中的超薄半导体层。CPD旨在解决这两个问题。
  • In光刻,CD is the minimum features size that is to be patterned on the晶圆.在其他半导体工艺中,CD是在基底used to describe the accuracy or other characteristic of a given process.
  • An undesirable effect whereby a signal in a circuit element,such as an互连线,影响附近另一个电路中的信号。在半导体领域,the coupling is usually a result ofparasitic capacitance在两个电路之间。
  • 一种二次真空泵,通过低温冷冻和吸收气体分子来捕获气体分子。低温泵能够产生很高的真空,但必须定期进行再生。即allowed to return to ambient temperature to desorb and pump away the captured gas species.
  • 原子排列成有序周期阵列的物质。
  • 一种太阳能电池技术的总称,它使用晶体结构的纯硅基底。
  • 一种通过曝光来沉积薄膜的方法。基底一种或多种挥发性前体,which react and/or decompose on the substrate surface.
  • 晶圆通过制造过程的特定部分进行加工所需的时间。
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D

  • 不反光,非能量吸收,inorganic电介质在金属或多晶硅上沉积的一层,用于改善光刻performance.
  • 波长低于300nm的紫外光谱的一部分。
  • 缺陷位于有图案的晶片上的工艺。创建缺陷位置列表并将其传递给DR-SEM供审查和分类。
  • A type ofscanning electron microscope用于对晶圆制造过程中的缺陷类型进行分类,并确定这些缺陷是否会影响芯片产量。
  • A process used to deposit a thin layer of insulating or conductive material onto the substrate.
  • Rules that outline geometry and connectivity restrictions for the design and layout of integrated circuits.
  • 在半导体制造业,the area of the silicon wafer on which a functional circuit is fabricated.在每片晶圆上都制造了数百个相同的模具(可选复数是模具和骰子)。
  • 绝缘体
  • 更具体地说,也指可能被外加电场极化的绝缘体。Two dielectrics commonly used in semiconductor processing are silicon dioxide (SiO) and silicon nitride (Si3n
  • The large conical wheel on a batch processing ion implanter used for holding wafers during离子注入.A wafer is mounted at the end of each"“说话”of the disk.随着磁盘旋转,每片晶片依次通过离子束,离子束被径向扫描以提供均匀的剂量across each wafer.
  • 为了改变某些固有特性,一种被控制添加到材料中的杂质。such as resistivity or melting point.在半导体中加入掺杂剂,形成一种主要为负的材料。(n-type)或积极的(P型)电荷载体取决于掺杂剂种类。
  • 杂质的引入,或dopants.变成晶体点阵的一种材料来改变其电性能。要创建n型区域,砷(As)arsine (AsH3)磷化氢(ph3)锑(Sb)是常用的。For p-type regions,typicaldopantsare boron (B),二氟化硼(BF)和三氟化硼(BF3
  • 总金额dopants以离子/cm测量需要给植入的晶片提供所需的电性能。
  • 一种精密的电流测量装置,用于计算植入晶片的离子总数。该功能有时与均匀性监测相结合。
  • 一种图案化技术,旨在增加可在晶圆上产生的电路特性的密度,超过特定光刻的正常极限。步进器.见节距减半and萨达普.
  • 太阳能技术光伏发电manufacturing where contact lines or other structures are built up in multiple,精确校准的丝网印刷操作。
  • 双面打印的示例应用包括制作更窄的更高的接触线和选择性射极cell types.
  • a method that uses inductive coupling to generate nitrogen plasma and incorporate nitrogen into the top surface layer of an ultra-thin gate oxide to increase the dielectric constant of the gate dielectric.
  • A type ofICP plasmasource used primarily for etch applications that separates the management of plasma density and ion energy,导致高蚀刻率和对基板的最小等离子损伤。
  • The output terminal of aFET.
  • A type of volatile computer memory where each bit is stored in a separate capacitor.Because capacitors self-discharge over time,the state of each bit must be refreshed approximately 15 times per second,因此,术语动态”.Compare with"static"“闪存.
  • DRAM提供任何类型内存的最快编程,使其非常适合直接连接微处理器作为主存储器。
  • 大马士革一次用铜形成和填充两个特征的过程,e.g.,一沟槽覆盖A通过may both be filled with a single copper deposition step.
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e

  • In solar PV technology,转换成电能的入射太阳能的一部分。
  • 由于导电电子和扩散金属原子之间的动量转移而引起的导体中离子运动引起的物质运动。
  • 从化学溶液中除去金属并沉积在带电表面的沉积过程。也称为电化学电镀,electroplating,或电沉积。
  • 通过电解进行,which is the process of separating a liquid into its different chemical parts by passing an electric current through it.
  • 一种稳定的亚原子粒子,带有负电荷,用作电的载体。
  • In离子注入,a source of electrons in the end station in the vicinity of the wafer,用于中和带正电的植入离子形成的不希望的电荷,这些离子可能会损坏敏感的电路特性。
  • 电子(或质子)所获得的能量,同样大小的电荷)通过一伏特的电压差。In离子注入,eV is used as a measure of the momentum of a particle.与动量较小的粒子相比,动量较大的粒子将进一步穿透半导体晶格。
  • 没有电流流动的静态电压场。In离子注入,它是指利用电压弯曲或聚焦离子束。
  • A negatively charged electrode that reflects electrons - abeam filter.
  • 高级的一种背面接触光伏电池。In the Emitter Wrap Through cell structure,一个连续的发射器通过数千个直径小于100微米(微米)的激光钻孔孔扩散,将电流传到电池背面。通过消除前触点,EWT增强光吸收,提高细胞效率。
  • 也,称为范围末端位错环,EOR defects are imperfections in the silicon crystal lattice found immediately below the interface between theamorphized晶体管的结晶区通道after离子注入.
  • 可以使用以下方法最小化EOR缺陷:cryogenic implantation.
  • 光束线某些变量中使用的元素ion implanters同时将离子束减速至最终能量,并过滤离子束,以去除不需要的高能成分。smear"the transistor通道,导致漏电流增大,性能下降。
  • 用于比较门性能的数字。电介质通过指示氧化硅薄膜需要多厚才能产生与所使用的介电材料相同的效果。
  • A number used to compare performance of high-k dielectric MOS gates with performance of SiO2-based MOS gates.它显示了获得与具有较高介电常数k的较厚SiO2介电体相同的栅电容所需的SiO2栅氧化物的厚度[例如,使用厚度为10纳米的介电体(K=39(SiO2的K为3.9))可产生1纳米的EOT。
  • 一种沉积方法,or growing,一种单晶薄膜,其中沉积的薄膜具有与基板相同的晶格结构和取向。这为建立半导体器件提供了一个高纯度的起点。
  • 空气污染指数technique that monitors processing tools to provides visual and statistical reporting tools to identify bottlenecks and improve factory performance.
  • 通过化学反应或物理轰击去除指定区域内材料的过程。该工艺可使用液相(湿)蚀刻剂或真空(干燥)下进行,通常使用等离子体来生成气相反应物。
  • The rate at which material is removed duringetchprocessing,通常表达/ s或纳米/ s。
  • A film layer used to restrictetch深度和保护底层材料。ESL的选择是抗蚀刻化学正在使用。
  • 光刻使用13.5nm超紫外线照明的技术。它代表了与杜夫lithography because all the optical elements must act in a reflective mode and the entire optical system must be kept under vacuum.
  • In离子注入,提取电极用于从源中提取带正电的离子。从源头流出的离子在下游结合形成用于植入的光束。dopantsinto a silicon wafer.
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f

  • Common name for a semiconductor fabrication plant,制造集成电路的工厂。
  • Also known as Embedded Wafer-Level Ball Grid Array.A chip packaging scheme in which the package is not created on a silicon wafer,but on an artificial wafer made of molding material (e.g.,环氧树脂)。芯片之间的距离通常比硅片上的距离大。Interconnects are created around the chips and electrical connections are made from the chip pads to the interconnects.任何数量的额外互连都可以在包上以任意距离创建(扇出设计)。使该方案成为空间敏感应用的理想方案,在这种应用中,芯片面积不足以将所需的互连数量放置在适当的距离。
  • 空气污染指数technique that uses process state models to deduce the occurrence and location of a fault condition and diagnose the cause of the fault.
  • 集成电路制造的第一部分,包括晶体管制造。Feol通常包括(但不包括)沉积联络and metal互连层。术语“前端”有时用于指整个过程中完成的晶圆。
  • A type of transistor that relies on an electric field to control the flow of charge carriers in a semiconductor material.
  • An ultra-clean enclosure mounted to the front of a semiconductor processing system that transfers wafers to and from the cleanroom environment and the interior of the system.
  • A term used in沉积用于描述晶圆顶部表面与电路特征表面(如低于顶部表面的沟槽和通孔)不同的应用。
  • finfet是FETin which the conducting通道is surrounded on three sides by a thin silicon"fin"形成晶体管的栅极。Although technically the term only refers to a design with two gates,该术语通常用于描述任何多栅晶体管结构,不管门的数量。
  • The main design goal of the finFET is to reduce current leakage while the transistor is in the"off"状态。
  • A type of non-volatile storage technology that requires no power to retain data,不像动态随机存取存储器.“名字”flash"这是因为内存被擦除并编程成大的块,一次从数百位到数千位。This inability to address individual bits makes it too slow for direct connection to a microprocessor,但闪存的机械稳定性和低成本使其成为移动设备中大容量存储的理想选择。
  • Any consumer display device,such as an液晶显示器AMOLED,有一个平面,与阴极射线管显示器的弯曲前端形成对比。
  • 是一种将半导体器件互连的方法,例如集成电路芯片和微电子机械系统(MEMS)。to external circuitry with solder bumps that have been deposited onto the chip pads.
  • 空间物理性质的流动,也经常随时间变化。
  • 在LED技术中,为产生指定的光输出所需的穿过LED端子的电压。It is also the voltage below which the LED will not produce any light.
  • 带有前开口接口的固定盒式容器,用于自动物料处理系统。(阿姆斯)The use of FOUPs can reduce particle counts on wafers because the interior of the FOUP is isolated from the ambient fab environment.
  • An amorphous insulating material (k=approximately 3.5) made by doping SiO氟通常用于铜互连层之间。又称氟硅酸盐玻璃。
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G

  • A terminal of aFETthat controls the flow of current between the来源and排水终端。
  • 导电和绝缘层的总称,包括大门A中的结构MOSFET.
  • A term,short for generation,用于平板显示器描述玻璃尺寸的制造基底.
  • 每一代都比前一代大80%。
Generation 典型尺寸(mm) 面积(平方米) 介绍

第2代

400 x 500

零点二

1993

Gen 3

620 x 750

0.5

1995

Gen 4

730 x 920英寸

零点七

二千

Gen 5

1,000 x 1,二百
1,200 x 1,300

一点二
1.6

2002

第5.5代

1,300 x 1,500

二千零四

第6代

1,500 x 1,八百五十

2.8

二千零三

Gen 7

1,870 x 2,二百

4.1

二千零四

第7.5代

1,950 x 2,二百五十

四点四

二千零五

第8代

2,160 x 2,四百六十

五点三

二千零六

第8.5代

2,200 x 2,500

五点七

2007

第10代

2,880 x 3,130

二千零八

  • A procedure that includes hand washing and the donning of gloves,头罩,面具,shoe coverings,以及工人进入洁净室前的其他特殊服装。
  • 洁净室外的支持区或服务区,允许服务人员在不进入洁净室的情况下进行日常维护。
  • defect inspection利用探测器收集中高角度散射光,使缺陷在黑暗背景下显得明亮的技术。Typically used to find small pattern defects beyond optical resolution.与…比较布莱菲尔德检查。
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H

  • 面具that is more resistant than photoresist to etching,高蚀刻时使用selectivity比使用光致抗蚀剂所能达到的要求更高。
  • A plasma featuring high concentration of free electrons,and hence,high concentration of ions.
  • A type of plasma-enhancedCVD在高真空和高等离子体激发电压下进行,以提高填充小高宽高比结构的能力。
  • A class of离子注入机which produces the highest beam currents,通常超过3ma。越大beam current,所需速度越快剂量is reached,从而提高晶片的生产能力。离子能量在1K之间电动汽车100keV是典型的。
  • A class of发光二极管它产生足够的光来用于照明应用。应用包括LCD显示器的背光照明,room illumination and automotive exterior lights.LED必须有多亮才能符合高亮度”is not well defined.最简单的定义是一个太明亮,不能直接看的定义。
  • 在半导体领域,空穴是指没有电子的情况下,人们可以在晶格中存在。It can be thought of as the opposite of an electron,正电荷与电子的大小完全相同。如果,在电场中,一个电子进入这个空位,孔实际上朝相反的方向移动。
  • 与半导体制造设备通信的智能工厂系统。在半导体领域,这个秒/宝石使用协议。
  • an area known to be prone to failure
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  • 一种等离子体源,其能量由电磁感应产生的电流提供,that is,by time-varying magnetic fields generally applied from outside the vacuum enclosure.
  • 一种半导体材料,用来形成通道of high-performancethin-film transistorsfor the active layer of液晶显示器s.与…相比非晶硅,the conventional channel material,IGZO的电子迁移率越高,晶体管的转换速度就越快,以更快的刷新率启用更高分辨率的显示器。
  • 光刻resolution enhancement technique that replaces the usual air gap between the final lens and the wafer surface with a liquid medium such as water.
  • In离子注入,离子束与晶片表面之间的入射角。

检测各种类型缺陷(例如scratches,particles,damaged features) following each step in the semiconductor fabrication process flow.

  • 用于将器件或芯片的有源区彼此隔离的非导电材料。一些常用的绝缘体是二氧化硅,氮化硅,,BPSG,and聚乙二醇.
  • An electronic device that consists of many elements fabricated together on a single silicon substrate.
  • 集成电路中连接晶体管和外部连接的线路。
  • 用于集成电路金属层之间绝缘的薄膜。
  • Insulating films used between adjacent metal lines.
  • 硅或其他合适材料的一层,在一个插座或另一个插座的连接之间起到电气接口路由的作用,以将连接扩展到更宽的间距或将连接重新路由到不同的连接。
  • 从太阳能电池板转换直流电的装置,例如,与电网电兼容的交流电源。
  • an electrically charged atom or group of atoms formed by the loss or grain of one or more electrons
  • 一种工艺技术,其中dopantchemicals (boron,砷,等)在强电场中加速穿透晶圆表面,从而改变了材料的电特性。
  • 一种工具,设计用于在基底上均匀地注入选定的掺杂原子,使其达到规定的深度,达到所需的浓度。这项技术被称为离子注入.
  • The process of adding to or removing one of more electrons from an electrically neutral atom or molecule.Once a particle is ionized,它可以加速,利用磁场或静电场操纵和操纵,就像在光束线.
  • 一个普通人TCO材料。
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J

  • The interface between two semiconductor regions of differingdopant类型。通常指的是P-N结,电导率类型从P型n-type.
  • In solar modules,为模块输出提供连接点而设计的环境外壳。
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K

  • 也称为介电常数,通常用希腊字母kappa(κ)表示。一种物质浓缩磁通量的程度的表示。
  • 在电子领域,it refers to the capacitance of a material relative to silicon dioxide.
  • 高k值允许晶体管大门在不增加不良泄漏的情况下缩小尺寸。
  • A low k-value is desirable in an insulating material such as one used to separate互连因为它减少了将能量浪费为热量的电荷积聚,降低设备的总功耗。In addition,低k值允许更快的信号传播,从而更快的开关速度。
  • The amount of material loss during a cutting process.在硅片生产中,切缝损失是指作为晶圆工艺一部分的硅消耗量,在决定成本方面起着至关重要的作用。边缘质量,以及晶圆的表面光洁度。
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L

  • In chemistry,一个术语,用于指经常发生或可能发生变化的事物。例如,if a molecule exists in a particular conformation for a short life-time,在采用低能量构象之前,前一种分子结构据说具有“高不稳定性”。在半导体中,it can refer to anALD易与晶圆表面材料反应的前体化学品。
  • A technique that uses lasers to ablate the surface of a thin film PV cell in order to define interconnect patterns.
  • 原子在晶体固体中的有序排列。
  • A semiconductor device that emits light when an electric current flows through it.LED由P-N组成junction当一对电荷载流子重新组合时,光子发出。
  • 主要用于光罩蚀刻that measures the precision of the etch process.线性定义为与目标的偏差范围。CD在指定的功能尺寸范围内。
  • 一种使用背光阵列的平板显示器。thin film transistors称为背板控制每个像素。
  • An LCD works by individually controlling each transistor to allow or block the light from a backlight.然后白光通过一系列滤色片来组装最终的滤色片,全彩图像。
  • When a pixel transistor is turned off,the liquid crystal material rotates polarized light through 90°,允许它通过第二个偏振器。
  • When the transistor is energized,液晶分子的排列方式使光不再旋转,so the light is blocked by the second polarizer.
  • Any technique that enhance the resolution,fidelity or other aspect of the光刻process.
  • The transfer of a pattern or image from one medium to another,例如来自photomaskto a wafer using a步进器.
  • A chamber used to transfer a wafer or wafers between the atmospheric pressure of theFI以及用于加工的真空环境。
  • 同时加工的具有相同特性的一批晶圆。很多东西通常放在一起片盒.
  • CVDprocess performed in an environment below atmospheric pressure.
  • A chip with between 3,000和100,单个芯片上有000个晶体管。The first LSI chips were produced in the mid- 1970s.
  • 用于创建polysiliconfilms using a two step process.第一步使用PECVD过程,lower than the 600-1000°低压化学气相淀积通常用于半导体制造的工艺。第二步使用退火process to convert the precursor into polysilicon.
  • LTPS films are commonly used inAMOLEDand ultra-high resolutionTFT-LCD显示。
  • 在LED技术中,a measure of how efficiently an LED converts energy to electromagnetic radiation.Usually expressed in lumens per watt (lm/W).
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M

  • 一种有图案的材料层,用来防止直接在其下面的材料被腐蚀。Also an abbreviation of光罩.
  • 瓦里安植入器中的质量分析磁铁位于来源而工艺室要偏转和过滤离子,所以只有选定的离子进入工艺室。This ensures that only the requireddopants够到晶圆。
  • 一种计算机控制的系统,在制造环境中管理在制品的运输和储存。
  • A class of离子注入机设计最大化剂量均匀性。Beam currents range from 1µA to 5mA,at energies from 5-600keV.中等电流的植入器通常能够植入dopants植入角从晶圆表面向下30度,能够将掺杂剂部分植入晶圆表面现有结构的下方。
  • Very small mechanical or electromechanical devices such as sensors and actuators fabricated using modified semiconductor device fabrication techniques.
  • 一种软件控制系统,用于在制造环境中管理和监控工艺材料中的工作。
  • 这个CVDPVD一种高导电性金属层的沉积,用于将器件互连在芯片上。通常使用的金属包括铝,钨和铜,等。
  • 确定尺寸的测量科学,数量,or capacity;使用传感器和测量设备确定晶圆加工中物理和电气特性的技术和程序。
  • A form of thin film silicon with very small (0.5-2µm) silicon crystals intermixed with amorphous silicon.通常沉积在薄层(通常为1-3微米)中,tandem(堆叠)薄膜太阳能电池。
  • 根据相同特征的密度(例如稠密的,半密实)关于开阔区域特征。
  • (微米或微米)长度单位;one-millionth of a meter.
  • An integrated circuit that contains arithmetic,单个封装中的逻辑和控制电路。
  • An enclosure or the environment created by an enclosure to keep wafers free of contamination such as a福普.
  • MOCVD is a type ofepitaxyprocess used to deposit compound semiconductor films,尤其是那些用于制造高亮度LEDand power electronics.在MOCVD过程中,在含有所需金属和其他元素的有机化合物之间的基质表面发生化学反应。
  • 太阳能组件是最终封装的光伏发电机。在C-Si技术中,模块通常包含几十个solar cellswired together.
  • a structure obtained by growing a layer of silicon dioxide (SiO)在硅基片上沉积一层金属或多晶硅(后者常用)。通常用来描述用这种方法制造的晶体管。
  • 在太阳能光伏领域,a type of silicon wafer that is cast into ingots using grains of monocrystalline silicon.这些锭被切成薄片,用于制造微芯片和光伏电池。
  • A type of defect found inflat panel displays显示区域亮度不均匀。Also known as"clouding".
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n

  • Semiconductor material that has negatively charged conductivity (an excess of electrons).
  • 用于闪存仅当其至少一个输入没有信号时才产生输出信号,thus being"不是而且”(和运算符的倒数)。
  • 半导体解决方案,太阳能和显示行业的重点是尺寸小于100纳米。
  • 长度单位;one billionth of a meter.
  • 一些瓦里安植入器使用的一种装置,在设置期间测量离子束电流,并作为中性点的陷阱。光束线.
  • 在离子束中运动的粒子,其能量相同,但不再带电。Neutrals cannot be manipulated by external fields and will continue at a fixed velocity until colliding with the vacuum chamber walls or other particles.
  • 转化为氮化物
  • 金属氧化物半导体其中有源载流子是在静电形成的n型源极和漏极区域之间流动的电子的晶体管。-通道在p型硅基片中。
NOR
  • 用于闪存产生与或相反的输出结果。
  • A thin layer of film that promotes the growth of a subsequently deposited film.
  • A suspected defect reported by adefect inspection可以忽略的系统,因为它不会影响已完成设备的功能。Suppressing nuisance,或“false alarm"缺陷是先进缺陷检测系统的关键能力。
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o

  • Oxide-nitride-oxynitride;多层金属氧化物半导体栅介质。
  • 光刻enhancement technique that modifiesphotomaskcircuit features to compensate for the non-ideal properties of the光刻process.
  • A light-emitting device where photons are emitted as a result of electron-hole interactions in a thin film organic semiconductor.
  • In离子注入,the azimuthal angle of the wafer's crystal lattice structure in relation to the beam.At different orient angles,不同的掺杂剂渗透深度和channeling将获得。
  • In离子注入,将离子束扫过晶圆边缘以获得均匀的剂量at the wafer periphery.
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  • 具有正电荷导电性(电子缺陷)的半导体材料。
  • 所有电路元件的固有电容,如互连andtransistors使他们的行为偏离ideal"电路元件。
  • 在半导体领域,refers particularly to the undesirable capacitance between closely-spaced conductors that can lead to effects such as相声.
  • 降低介电常数可以减小寄生电容,或k值of the insulator that separates adjacent circuit elements.
  • A vertical bar graph in which values are plotted in decreasing order of relative frequency from left to right.有助于分析哪些问题首先需要注意。
  • 半导体器件中的一层,在电路元件上形成密封,either as the final step in manufacturing or to protect chemically-active materials from reaction as wafers are transferred between processing tools.Plasma nitride and silicon dioxide are the materials primarily used for passivation.
  • 在半导体制造业,the creation of desired circuit geometry on a wafer.一般用于指光刻and related processes such as patterning film deposition andetch.
  • CVDprocess using等离子体驱动沉积的能量。This technique allows lower deposition temperatures,增加薄膜密度和纯度。
  • A sheet of clear polymer that rides on a frame to protect the patterned region of a photomask from airborne contamination.During exposure,任何污染都被排除在焦平面之外,因此print"在晶圆上。
  • photomaskthat take advantage of the interference generated by phase differences to improve image resolution in photolithography.
  • 掺杂SiO制成的非晶态绝缘材料用磷来提高防潮和回流特性。又称磷硅酸盐玻璃。
  • 熔融石英板,通常为152平方毫米,covered with a pattern of opaque,透明和移相区域将投射到晶圆上光刻定义集成电路一层的布局的过程。
  • 光敏感的有机聚合物光刻过程,然后开发出一种识别待蚀刻底层膜区域的图案。
  • 相邻特征中心之间的距离,例如互连线条或接触洞。
  • Any patterning technique that creates paired,单一功能光刻图像pitch原始图像的一半,因此,创造出比光刻工艺本身所能做到的更小的图案。有时被错误地称为音调加倍。
  • In平板显示器技术,a measurement of resolution that describes the distance between individual pixels on the display.通常以每英寸像素表示,或者PPI。
  • The process by which an uneven wafer surface is made relatively flat using a low-selectivity etch or through化学机械抛光.
  • 第四种物质状态-不是固体,液体或气体。在等离子体中,the electrons are pulled free from the atoms and can move independently.The individual atoms are charged,即使正负电荷总数相等,maintaining an overall electrical neutrality.
  • 绝缘层沉积在完成的晶体管上菲奥尔processing upon which the first metal互连layer is formed.
  • P—通道其中有源载流子是在n型硅衬底上静电形成的p通道中,p型源极和漏极区域之间流动的空穴。
  • A film stack commonly used for the gate electrode in DRAM fabrication,由钨硅化物组成polysilicon.
  • 多晶硅(或半晶硅,多晶硅,聚硅,或者简单地说”聚)是一种由多个小硅晶体组成的材料。广泛用作高掺杂状态的导体/栅极材料。Poly films are typically deposited by pyrolyzing silane using an低压化学气相淀积process.
  • 一种用于离子注入used to reducechanneling故意非晶化以前的地区dopant植入,从而获得更均匀的掺杂剂分布。在非晶化区域内没有沟道,根据定义。预非晶化植入物通常是用惰性元素如氩进行的。
  • The last implant done before deposition of metal.
  • An operation or group of sequential operations performed in the manufacture of an integrated circuit or other device.
  • An enclosed area in which a single process is performed in the manufacture of an integrated circuit or other device.
  • Optimizing each process step to work correctly with the prior and subsequent steps in a sequential process flow.
  • A type of触摸屏that consists of a grid of electrodes that can detect distortions of an electrostatic field caused by the presence of a conductive object such as a finger or conductive stylus.
  • PCT panels are commonly used for applications that required the precise tracking of multiple contact points simultaneously,例如智能手机和平板电脑。
  • A process where light is converted to electricity.太阳能光伏是利用太阳辐射发电。
  • 一种用于制造薄膜光伏组件的树脂。The PV circuit,formed on a sheet of glass,覆盖在一张pvb中,然后后玻璃.然后将该组件层压以封装电路,保护它不受环境影响。
  • 一种工艺技术,其中导电材料的原子(铝,氮化钛,etc.) aresputtered从Atargetof pure material,然后沉积在基板上以在集成电路内形成导电电路或平板显示器.
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Q

  • 由排列成一个圆的交替符号的四极所产生的磁场或静电场;用来聚焦一束带电粒子。
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R

  • 空气污染指数允许在机器之间修改处理参数的技术”runs"使变异性最小化。
  • An atom or group of atoms that has at least one unpaired electron and is therefore unstable and highly reactive.
  • Electromagnetic radiation with frequencies ranging from approximately 3 kHz to 300 GHz.
  • A spectroscopic method of chemical analysis that relies on the inelastic (Raman) scattering of monochromatic light.Enables real-time reaction monitoring and characterization of compounds in a non-contact manner.
  • 退火process in which a wafer is heated to a specified temperature for a short period of time.
  • RTP在半导体器件制造过程中反复使用,其用途如下:激活implanteddopantsor changing the state (or phase) of materials to enhance desired attributes (e.g.,导电性)。Annealing can be performed using three technologies – soak,尖峰,毫秒。技术的选择取决于几个因素,包括设备在制造顺序的特定点承受特定温度/时间暴露的公差。Broadly speaking,devices can bear longer periods of exposure (30-90 seconds),也被称为浸泡退火,在制造周期早期的高温下。As the cycle progresses,如果需要高温,必须降低温度或显著缩短暴露时间。Spike annealing falls in the latter category and is used for来源-排水implant activation and diffusion as well as high-k/metal大门制作。
  • 向内倾斜的。Refers to features whose sidewalls are concave.
  • 特定过程步骤的存储参数,比如气体的流动温度和压力。一般来说,the same recipe is used for all wafers in alot.
  • 芯片上的额外金属层,用于integrated circuit在其他位置提供,making chip-to-chip bonding easier.
  • A regulation that requires the increased production of energy from renewable energy sources,比如风,solar,biomass,还有地热。Another common name for the same concept is renewable electricity standard (RES).
  • 导电材料与通过它的电流相反程度的量度。
  • In离子注入,一个小光圈,usually found directly after the analyzer,它只将光束分解成一种带有特定电荷的分子或原子。
  • A flat,transparent plate,used in a步进器that contains the image of wafer patterns to be reproduced on a wafer.常与…互换使用photomask.
  • A trademark of the Apple Corporation used to describe any display where the pixel density is sufficiently high that the human eye cannot distinguish individual pixels.
  • 注意,这个术语与pixel density,因为它包括了观察距离。对于符合视网膜显示条件的手机屏幕,其像素密度应超过300ppi,但是一台电视只需要大约50 ppi。
  • A type ofPVD与传统的PVD反应器相比,使用感应耦合等离子体来降低离子能量的工艺,因此,更温和的沉积机制可以产生非常薄的亚纳米薄膜,几乎可以消除对底层电路特性的损害。
  • 在里面离子注入,一种电子束,它被限制在一个矩形的横截面内,允许一个晶片的整个表面被一个单轴方向的电子束所覆盖。与必须来回扫描以覆盖晶片的点束相反。
  • An etching technology that uses chemically reactive plasma to remove material deposited on wafers.等离子体中的高能离子与晶圆表面的材料发生反应。
  • 用于真空系统初始抽真空的机械泵。The process is called"粗加工。”“
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S

  • A term coined by betwayappApplied Materials to describeCVD在略低于大气压力的情况下使用TEOS/ozone chemistry.
  • double patterning采用牺牲侧壁间隔膜实现的技术节距减半.Also known as sidewall spacer double patterning(SSDP) or spacer defined double patterning (SDDP).
  • 自我调整的收缩silicide.水杨醛加工技术旨在利用沉积在图案化硅基板上的难熔金属在特定加工条件下与暴露的硅选择性反应的原理。不会与相邻材料发生反应,如氧化硅材料。因此,无需模式化步骤。
  • In离子注入,the movement of the ion beam relative to the wafer in order to cover the entire wafer surface.
  • A component of an离子注入机或者移动离子束穿过晶圆,or moves the wafer through the ion beam.这可以通过磁场来实现,an electrostatic field or with mechanical motion.
  • A microscope that uses an electron beam rather than light to illuminate the sample.The beam is scanned back and forth across the sample surface.
  • Incrystalline silicon太阳的光伏发电制造业,a sheet of woven material supporting a stencil with open areas through which silver paste or other materials is forced by a roller or squeegee to form a pattern on a wafer.它类似于photomask在半导体制造业。
  • In离子注入,很薄,SiO牺牲层它能阻止离子束中夹带的杂散离子,并随后被去除。In addition,屏蔽氧化物轻微散射主离子束,从而防止channeling.
  • 任何不能直接排放到大气中的真空泵,即that must work in tandem with aroughing pump.Commonly used secondary pumps in semiconductors arecryopumpsand涡轮泵.
  • A software protocol used to standardize communication between semiconductor manufacturing equipment and the host control system.它的设计是为了简化工厂的自动化,通过建立一组通用的指令,所有设备都能理解这些指令。绝妙的.
  • 成核层其中成核材料与随后沉积的薄膜相同。
  • A technique used to increase the conversion efficiency of crystalline silicon光伏发电solar cells.Selective emitters are heavily-doped regions placed precisely underneath the front metal contact lines in order to reduce electrical contact resistance and allow electricity to flow more freely.掺杂区通常是通过沉积来制造的。掺杂物膏在晶圆的表面,然后在上面打印接触线。
  • The ratio of etch rates observed in two materials during etch processing.通常用于指用于去除的材料的相对蚀刻速率和面具,以及蚀刻图案保真度的重要指标。
  • A material whose electrical conductivity is intermediate between that of metals (conductors) and insulators (non-conductors) and can be modified physically or chemically to increase or decrease its conductivity by the addition ofdopants.
  • A gas that readily decomposes into silicon and hydrogen,硅烷通常用来沉积含硅化合物。与氨反应生成氮化硅。or with oxygen to form silicon dioxide.
  • An anneal (sintering) process resulting in the formation of metal-silicon alloy (silicide) to act as a contact.例如,Ti deposited on Si forms TiSi2 as a result of silicidation.
  • 硅与更具正电性的元素的化合物。镍,tantalum,titanium and cobalt silicide films are used to create ohmic (low-resistivity) contacts for transistor connections.Molybdenum silicide is commonly used as a light-absorbing layer in掩模.硅化钨(多聚物) is used for DRAM gate electrodes.
  • The most common电介质material used in semiconductor manufacturing,due to its versatility and stability.Also known simply as"oxide",它可以通过热氧化在硅片上生长,也可以通过PECVD硬盘驱动器过程。
  • 使用等离子体增强或lpcvd沉积的硅/氮膜介质。Sometimes loosely referred to as SiN.
  • 高功率磁控管电源PVD给等离子体提供足够能量的过程sputtered金属原子被电离了。The metal ions can then be accelerated towards the wafer using an electric field,creating a more directional deposition pattern and thus higher step coverage in small geometry structures.
  • 源掩模优化(SMO)是一种用于光刻为了补偿像差引起的图像误差,衍射或过程效应。
  • 在半导体制造中使用层状硅绝缘体硅基片。SOI基板减少了parasitic capacitance在集成电路中的相邻器件之间,与内置在大块晶圆中的器件相比,enabling reduced power consumption and thus higher device performance.
  • 一种将太阳光的能量直接转换成电能的装置。photovoltaiceffect.Multiple cells are wired together to form模块.
  • A utility-scale photovoltaic power station.
  • A lightly-doped区域从来源排水into the transistor通道设计用于在晶体管器件运行期间分散电场。如果没有分机,the electric fields in very small transistors may be sufficient to damage the gate dielectric and cause device failure.
  • 这个离子注入process used to create the source-drain extension is an example of损伤工程.
  • 一种通过将统计技术应用于过程的监视和控制来改进制造过程质量控制的方法。
  • 固定冷却金属板,located on top of an implant disk,捕捉离子束过扫描.
  • 当不同的时候recipes用于lot为了提高特定工艺步骤性能的实验目的,该地块被称为分割地块。
  • A method of depositing a film where atoms are ejected from a solidtarget由高能粒子轰击目标而产生的物质。
  • In光伏发电wafer manufacturing,the process of cutting silicon ingots into rectangular blocks using a specialized钢丝锯.方块,or bricks,然后切成薄片晶圆process.
  • 一种计算机存储器,其中每一位存储在一个通常由6个或8个晶体管组成的网络中,该网络有两个稳定状态。
  • SRAM单元很复杂,在芯片上消耗的面积比动态随机存取存储器cells,但速度更快,更节能。
  • 微处理器和其他逻辑芯片通常在芯片上用SRAM单元制作,用作高速缓存。used to store the most frequently accessed instructions and data.
  • The ratio of thickness of film on the sides of a feature to the thickness of the film at the bottom (e.g.,在通孔中)或在功能顶部(例如,fins of a FinFET) respectively.
  • Equipment used to transfer a reticle(photomask)在晶圆上刻上图案。相同的模式被转移到每个die在晶圆上。
  • A technique to isolate each transistor or memory cell from its neighbors in order to prevent current leakage.这项技术采用了蚀刻在硅中的沟槽图案,填充有绝缘材料,如二氧化硅。
  • 半导体制造中使用的通过扭曲晶体将应力引入晶体管和存储单元的工艺。晶格.In logic,这使得电流更容易通过晶体管,提高晶体管性能。在记忆中,strain can also reduce leakage current,允许更高的细胞密度。
  • A kind of cutting wire used in钢丝锯形成了,或卷曲,为了提高切割速度而形成锯齿状或类似的形状。
  • 操纵薄膜的材料。硅是最常用的半导体和c-si光伏电池。玻璃通常用于LCD和薄膜光伏应用。
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T

  • A solar PV cell type that uses multiple light converting materials to increase conversion efficiency.Tandem junction thin film silicon cells,例如,使用无定形的silicon and微晶层。
  • InPVD,目标是待沉积材料的来源。Atoms are ejected from the target as a result of the bombardment of energetic particles.
  • 用于平板显示器等光电器件的掺杂金属氧化物薄膜,触摸面板和光电。In LCDs,TCO层形成电极,产生电场使液晶极化。In touch panels,TCO layers are used for the sensing electrodes.In光伏发电,TCO形成电池的顶部电极。
  • A transmission electron microscope that transmits a beam of electrons through an ultra-thin specimen.它的工作原理与光学显微镜相同,但分辨率更高。
  • A liquid source for oxide deposition,正硅酸四乙酯是与
    formula Si(OCH5.
  • The terminal effect is a phenomenon in电化学沉积因此沉积的薄膜在晶圆边缘的厚度往往比中心厚。它源于电压降,电压降发生在负极端子接触晶圆边缘的中心位置,due to the resistance of the wafer.这种阻力的主要成分是种子层在晶圆上沉积的PVDbefore the plating process.种子层在每个技术节点处变薄,这增加了晶片的电阻率,加剧了终端效应。这种效应可以通过使用先进的电流密度控制系统来补偿,该系统可以调节晶片上施加的电压,在晶圆上形成均匀的沉积。
  • A layer of material ranging from fractions of a nanometer to several micrometers thick.
  • MOSFET采用薄膜技术制造,used primarily in the manufacturing of active matrix LCDs.
  • 晶圆数量atool每小时可处理。
  • A term used to refer to a piece of semiconductor processing equipment.
  • 在半导体领域,non-planarity generated by the fabrication of features on the wafer surface.这会对后续层的图案产生显著影响,因为步进器optical system may cause parts of the pattern to be out of specification.Also used to describe non-uniformity induced by different material removal rates in化学机械抛光.
  • 一种计算机接口,用于检测触针或手指在典型的矩形区域上的存在。
  • 通常与显示器集成以产生touch screen.
  • 一种显示器,such as anTFT-LCDAMOLED包含一个触摸屏使用户能够直接与显示的图像交互,而不是通过鼠标或轨迹球间接交互。
  • toolthat integrates several steps needed to process photoresist (deposition,soft bake,暴露,发展,hard bake) in semiconductor manufacturing.
  • 一种半导体器件,用于开关和放大作为集成电路基本元件的电子信号。
  • 蚀刻在晶片上用作器件结构一部分的槽。
  • 电容器沟槽在基板上。这种技术允许在不增加晶圆上形成电容所需的面积的情况下增加电容。
  • A type ofsecondary vacuum pumpused to create a high vacuum.高速涡轮叶片,alternating with stationary blades,把气体分子压缩到泵的底部,用粗泵除去。
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U

  • 分辨率为3840 x 2160像素的数字视频格式。
  • 也称为2160P和4K,超高清的像素是传统高清1080p视频的四倍。
  • 半导体制造的一个领域,其重点是减少连接that form the来源and排水先进晶体管的区域,以提高性能,同时保持可接受的漏电流和击穿电压。
  • Deposition process in flip-chip packages that connects the die to the substrate with solder bumps.
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V

  • 低于大气环境的压力,often referred to by specific pressure ranges:
  • 粗真空,from atmosphere to 1 x 10-3托尔
  • 高真空,从到1 x 10-3托至1 x 10-9托尔
  • 超高真空(特高压)–低于1 x 10-9托尔
  • In离子注入,用于将固态离子源材料转换成气态以产生离子束的装置。
  • Vertical pathways through dielectric layers that make electrical connections between互连层。
  • A chip with between 10,000和1,000,单个芯片上有000个晶体管。这个术语通常被扩展到描述晶体管数量超过10个的芯片。000.其他术语,如超大规模集成(ulsi)被创造出来,but are no longer in widespread use.
  • 也称为3D NAND阵列。
  • A class of闪存多个二维存储单元阵列垂直分层在单个基板上的架构(而不是使用wafer-level packaging
  • VNAND is a method of increasing钻头密度不必减小每个单独单元的大小。
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W

  • 瘦的,circular or nearly square slices of mono- or多晶体silicon on which semiconductors and PV cells are built.
  • The technology of combining several集成电路S单独打开die一起形成一个单一的功能装置。
  • The process of dividing silicon ingots or bricks into wafers.
  • A protective liner made of metal or graphite installed inside the波导管.不需要的离子种类会在这些衬里上释放能量。
WEB
  • 辊对辊涂层技术的另一个名称,where thin films of material are deposited on rolls of flexible material.
  • 在工艺步骤之间使用液体化学从基板上去除不需要的材料或污染物的工艺。
  • 能够在固体表面均匀分布,而不是形成离散的液滴。
  • A machine that uses a moving wire to perform three key steps in the manufacture of silicon wafers.
  1. Cropping - removing the tapered ends of monocrystalline silicon ingots
  2. 方正-将圆柱形切割钢锭变成矩形块,或者砖。在多晶晶圆制造中,这个步骤是用来把大块铸锭切割成砖的。
  3. Wafering - cutting the bricks into individual wafers
  • Connection between gates of alltransistorsin a certain row of a memory array segment.
WP
  • 瓦峰值,一种太阳能工业装置,用于在理想的辐照条件下提供太阳能电池的功率。
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Y

  • 产品百分比(例如晶圆或模具)在符合规范的工艺中生产的。
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